Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/ - Electronics Letters

The lasers on both Si and InP substrates were tested under an RT pulsed condition (300111 kHr). Fig. 3 shows the typical current/light (UL) characteristics ( 3 3 0 ~ cavity length) of a laser on Si. The threshold current density is estimated to be as low as 1.7 kAIcm’. Furthermore, dependence of the threshold current density (J,,,) on the reciprocal of cavity length (IIL) was investigated and plotted in Fig. 4 for the lasers on Si and InP substrates. Although the data points are somewhat scattered, the lasers on both substrates have essentially similar dependence, demonstrating that the performance of the lasers on Si is comparable to that on InP. This result agrees well with the excellent EPD value, about 104cm ’, which we previously reported [6].